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Non-abruptness of heterointerfaces during LPE growth of (Hg,Cd)Te on (Cd,Zn)Te and Cd(Te,Se) substratesUTKE, I; FRENTRUP, W; HÄHNERT, I et al.Journal of crystal growth. 1996, Vol 162, Num 3-4, pp 126-134, issn 0022-0248Article

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Size dependent catalysis with CTAB-stabilized gold nanoparticlesFENGER, R; FERTITTA, E; KIRMSE, H et al.PCCP. Physical chemistry chemical physics (Print). 2012, Vol 14, Num 26, pp 9343-9349, issn 1463-9076, 7 p.Article

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TEM and EELS microanalysis of pc-Si thin film solar cells deposited by means of HW CVDSTÖGER, M; SCHATTSCHNEIDER, P; SCHLOSSER, V et al.Solar energy materials and solar cells. 2001, Vol 70, Num 1, pp 39-47, issn 0927-0248Article

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Computer-aided analysis of TEM images of CdSe/ZnSe quantum dotsKIRMSE, H; NEUMANN, W; WIEBACH, T et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 69-70, pp 361-366, issn 0921-5107Conference Paper

InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparationKAPPELT, M; TÜRCK, V; BIMBERG, D et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 552-557, issn 0022-0248Conference Paper

Defect analysis of degraded InGaP/GaAs HBTsPAZIRANDEH, R; ZEIMER, U; KIRMSE, H et al.IEEE Compound Semiconductor Integrated Circuit Symposium. 2004, pp 71-74, isbn 0-7803-8616-7, 1Vol, 4 p.Conference Paper

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